SI2324DS-T1-GE3 The Vishay Dale SI2324DS-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and 2.3A continuous current rating. It is supplied in a compact SOT-23-3 package.
Mfr Part #:

SI2324DS-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2324DS-T1-GE3 is an N-Channel MOSFET with a 100V drain-source voltage and 2.3A continuous current rating. It is supplied in a compact SOT-23-3 package.
✓ Total Stock: 122,604 pcs
$ Price Range: $0.99

SI2324DS-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
112,584 pcs
112584 pcs On Request 1 On Request On Request 1408+ On Request On Request
Non-Authorised Inventory information
10,020 pcs
10020 pcs On Request 1 On Request On Request On Request On Request On Request

SI2324DS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2324DS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2324DS-T1-GE3 is an N-Channel TrenchFET Power MOSFET designed for various applications including DC/DC converters, load switching, and LED backlighting in LCD TVs.

 

This MOSFET features a drain-source breakdown voltage of 100V and a continuous drain current of 2.3A at 25°C case temperature. The on-resistance is specified as a maximum of 234mOhm at 1.5A and 10V gate-source voltage. Key electrical parameters include a gate charge of 10.4 nC at 10V and an input capacitance of 190 pF at 50V.

 

Operating across a temperature range of -55°C to 150°C, the SI2324DS-T1-GE3 has a maximum power dissipation of 1.25W when mounted on a PCB (Ta=25°C) and 2.5W at 25°C case temperature (Tc=25°C). Thermal resistance is rated at 100°C/W for junction-to-ambient and 50°C/W for junction-to-foot.

 

The component is housed in a TO-236-3, SC-59, SOT-23-3 surface-mount package and is available in tape and reel packaging. It is RoHS3 compliant, Lead (Pb)-free, and Halogen-free.

SI2324DS-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si2
Canonical Name: Vishay Siliconix Si2324DS N-Channel 100V MOSFET
Subcategory: N-Channel

SI2324DS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI2324DS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2324DS-T1-GE3 Features

  • 100V drain-source breakdown voltage.
  • 2.3A continuous drain current.
  • Low on-resistance of 234mOhm.
  • Compact SOT-23-3 surface mount package.
  • RoHS3 compliant and halogen-free.

SI2324DS-T1-GE3 Applications

  • Suitable for low-power DC-DC converters.
  • Used in load switching applications.
  • Ideal for power management circuits.
  • Applicable in battery-powered systems.

SI2324DS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI2324DS-T1-GE3?

The minimum drain-source breakdown voltage is 100V at VGS = 0V and ID = 250µA.

What is the maximum continuous drain current?

The maximum continuous drain current is 2.3A at a case temperature of 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 234mOhm at a drain current of 1.5A and gate-source voltage of 10V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the SI2324DS-T1-GE3 available in?

It is available in a SOT-23-3 surface mount package.

What is the gate threshold voltage?

The maximum gate-source threshold voltage is 2.9V at a drain current of 250µA.

What is the maximum power dissipation?

The maximum power dissipation is 1.25W at 25°C ambient temperature and 2.5W at 25°C case temperature.

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