SI2323DS-T1-GE3 The Vishay Dale SI2323DS-T1-GE3 is a P-Channel MOSFET designed for surface mount applications. It features a 20V drain-to-source voltage and a continuous drain current of 3.7A.
Mfr Part #:

SI2323DS-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2323DS-T1-GE3 is a P-Channel MOSFET designed for surface mount applications. It features a 20V drain-to-source voltage and a continuous drain current of 3.7A.
✓ Total Stock: 114,200 pcs
$ Price Range: $0.99

SI2323DS-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
113,000 pcs
113000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
1,200 pcs
1200 pcs On Request 1 On Request On Request On Request On Request On Request

SI2323DS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2323DS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2323DS-T1-GE3 is a P-Channel MOSFET with a Metal Oxide semiconductor technology. It is designed for surface mount applications and comes in a SOT-23-3 (TO-236) package.

 

Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 20V and a maximum continuous drain current (Id) of 3.7A at ambient temperature. The on-resistance (Rds On) is a maximum of 39mOhm at 4.7A and 4.5V Vgs. The gate threshold voltage (Vgs(th)) is 1V maximum at 250µA. Input capacitance (Ciss) is 1020pF at 10V, and gate charge (Qg) is 19nC at 4.5V Vgs. The maximum gate-to-source voltage is ±8V.

 

Thermal characteristics include a maximum power dissipation of 750mW (Ta) and an operating temperature range of -55°C to 150°C (TJ). The device is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.

 

This MOSFET is suitable for various electronic circuits requiring a P-channel switching element in a compact surface-mount package.

SI2323DS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2323DS-T1-GE3 P-Channel MOSFET
Subcategory: Single

SI2323DS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2323DS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2323DS-T1-GE3 Features

  • P-Channel MOSFET technology.
  • 20V drain-to-source voltage rating.
  • 3.7A maximum continuous drain current.
  • Low 39mOhm on-resistance.
  • Surface mount SOT-23-3 package.

SI2323DS-T1-GE3 Applications

  • Used in load switching and power management circuits.
  • Suitable for battery-powered portable device applications.
  • Ideal for DC-DC converter and voltage regulator designs.
  • Applicable in low-voltage motor control and driver circuits.

SI2323DS-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI2323DS-T1-GE3?

The maximum drain-to-source voltage (Vdss) is 20V.

What is the maximum continuous drain current?

The maximum continuous drain current (Id) is 3.7A at ambient temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 39mOhm at 4.7A drain current and 4.5V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI2323DS-T1-GE3 in?

It is available in a SOT-23-3 (TO-236) package, suitable for surface mounting.

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