SI2323DS-T1-E3 The Vishay Dale SI2323DS-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and 3.7A continuous drain current. It is supplied in a surface-mount SOT-23-3 package.
Mfr Part #:

SI2323DS-T1-E3

Available from 6 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2323DS-T1-E3 is a P-Channel MOSFET with a 20V drain-source voltage and 3.7A continuous drain current. It is supplied in a surface-mount SOT-23-3 package.
✓ Total Stock: 1,215,291 pcs
$ Price Range: $0.99

SI2323DS-T1-E3 Available from 6 distributors

✓ Authorised
✓ Non-Authorised

SI2323DS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2323DS-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI2323DS-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 20V and a continuous drain current of 3.7A at ambient temperature. The on-resistance is specified as a maximum of 39mOhm at 4.7A and 4.5V gate-source voltage.

 

The MOSFET operates within a temperature range of -55°C to 150°C (TJ). Key electrical parameters include a gate charge of 19nC at 4.5V and an input capacitance of 1020pF at 10V. The gate-to-source voltage maximum is ±8V, with a gate threshold voltage of 1V at 250µA.

 

Packaged in a SOT-23-3 (TO-236) surface-mount configuration, this component is suitable for space-constrained designs. The maximum power dissipation is 750mW at ambient temperature. It is classified under the MOSFET technology.

 

Compliance information indicates RoHS3 compliance and Moisture Sensitivity Level 1. REACH status is unaffected.

SI2323DS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2323DS-T1-E3 P-Channel MOSFET
Subcategory: Single

SI2323DS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI2323DS-T1-E3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2323DS-T1-E3 Features

  • P-Channel MOSFET technology.
  • 20V drain-source voltage rating.
  • 3.7A continuous drain current.
  • Low on-resistance of 39mOhm.
  • Surface mount SOT-23-3 package.

SI2323DS-T1-E3 Applications

  • Load switching in portable electronics
  • Battery protection circuits
  • Power management for handheld devices
  • DC-DC converter applications
  • Logic level conversion circuits

SI2323DS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the SI2323DS-T1-E3?

The drain-to-source voltage (Vdss) is 20 V.

What is the maximum continuous drain current?

The continuous drain current is 3.7A at ambient temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 39mOhm at 4.7A and 4.5V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the SI2323DS-T1-E3 in?

It is supplied in a TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting.

Is this component RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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