SI2323DS-T1 The Vishay Dale SI2323DS-T1 is a P-Channel MOSFET with a 20V drain-source voltage and 3.7A continuous drain current. It is supplied in a SOT-23-3 surface mount package.
Mfr Part #:

SI2323DS-T1

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2323DS-T1 is a P-Channel MOSFET with a 20V drain-source voltage and 3.7A continuous drain current. It is supplied in a SOT-23-3 surface mount package.
✓ Total Stock: 117,115 pcs
$ Price Range: $0.99

SI2323DS-T1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
116,645 pcs
116645 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
470 pcs
470 pcs On Request 1 On Request On Request On Request On Request On Request

SI2323DS-T1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2323DS-T1 Description

Short technical summary and product information.

The Vishay Dale SI2323DS-T1 is a P-Channel MOSFET designed for surface mount applications. It features a maximum drain-to-source voltage of 20V and a continuous drain current of 3.7A at ambient temperature.

 

Key electrical characteristics include an input capacitance of 1020 pF at 10V, a gate charge of 19 nC at 4.5V, and a maximum gate-source voltage of ±8V. The device has a gate threshold voltage of 1V at 250µA and an on-resistance of 39mOhm at 4.7A and 4.5V Vgs.

 

With a maximum power dissipation of 750mW at ambient temperature and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for various electronic circuits. The package is SOT-23-3 (TO-236), designed for surface mounting.

SI2323DS-T1 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2323DS-T1 P-Channel MOSFET
Subcategory: Single

SI2323DS-T1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2323DS-T1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2323DS-T1 Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • 3.7A continuous drain current rating.
  • Low on-resistance of 39mOhm at 4.7A, 4.5V.
  • Surface mountable SOT-23-3 package.
  • Wide operating temperature range.

SI2323DS-T1 Applications

  • Suitable for power switching applications.
  • Ideal for general purpose MOSFET needs.
  • Used in compact electronic designs.
  • Efficient for low voltage circuits.

SI2323DS-T1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

20V maximum.

What is the package type?

SOT-23-3 (TO-236-3, SC-59).

What is the operating temperature range?

-55°C to 150°C.

What is the gate threshold voltage?

1V maximum at 250µA drain current.

What is the maximum on-resistance?

39mOhm at 4.7A, 4.5V.

What is the gate charge?

19nC maximum at 4.5V.

What is the input capacitance?

1020pF maximum at 10V.

Home
Account

Categories