| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
98,701 pcs
|
98701 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Halogen Free | |
| Industrial Grade | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The Vishay Dale SI2323DS is a P-Channel MOSFET featuring TrenchFET® Power MOSFET technology. It is rated for a 20V drain-source voltage and is suitable for applications such as load switching and PA switching.
Key electrical characteristics include a low on-state drain-source resistance (Rds(on)) of 0.039 Ω at VGS = -4.5V and ID = -4.7A. The device operates within a junction and storage temperature range of -55°C to 150°C.
Packaged in a TO-236 (SOT-23) surface-mount package, the SI2323DS is designed for efficient power management in compact electronic systems. It is also available in halogen-free versions, adhering to environmental standards.
This MOSFET is a reliable component for designers seeking efficient switching performance in power control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $7.60 | $7.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the SI2323DS is -20 V.
The typical on-resistance (Rds(on)) of the SI2323DS at VGS = -4.5V and ID = -4.7A is 0.031 Ω.
The operating junction and storage temperature range for the SI2323DS is -55°C to 150°C.
The SI2323DS is available in a TO-236 (SOT-23) package.
The SI2323DS is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SI2323DS is 1 Unlimited.
Yes, the SI2323DS is Halogen-free According to IEC 61249-2-21 Available.