| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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67,020 pcs
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67020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,314 pcs
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3314 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,054 pcs
|
3054 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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33 pcs
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33 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2323DDS-T1-GE3 is a P-Channel MOSFET belonging to the TrenchFET Power MOSFET family. It is designed for applications requiring efficient power switching and management.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 5.3A at 25°C case temperature. The device offers low on-resistance values, with Rds(on) as low as 39mOhm at Vgs = -4.5V and Id = -5.3A. The gate-source voltage (Vgs) range is ±8V, with a threshold voltage (Vgs(th)) of 1V maximum at 250µA.
This MOSFET is housed in a TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C. The thermal resistance from junction to ambient is a maximum of 130°C/W, and junction to foot is 75°C/W.
Applications for this MOSFET include load switching, PA switching, DC/DC converters, and general power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
It is a P-Channel TrenchFET Power MOSFET.
The minimum drain-source breakdown voltage is -20 V at Vgs = 0 V and Id = -250 µA.
Maximum continuous drain current is 5.3 A at Tc = 25 °C and 4.1 A at Ta = 25 °C.
Maximum on-resistance is 39 mΩ at Vgs = -4.5 V, 50 mΩ at Vgs = -2.5 V, and 75 mΩ at Vgs = -1.8 V.
It comes in a surface-mount SOT-23 package (TO-236-3, SC-59).
The operating junction and storage temperature range is -55 °C to 150 °C.
The gate-source threshold voltage is 0.4 V minimum and 1 V maximum at Id = -250 µA.