| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,291,429 pcs
|
1291429 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
19,020 pcs
|
19020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
15,000 pcs
|
15000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
4,855 pcs
|
4855 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request | |
|
3,250 pcs
|
3250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
630 pcs
|
630 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2323CDS-T1-GE3 is a P-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) of 6A at 25°C case temperature.
This MOSFET offers a low on-resistance (Rds On) of 39mOhm at 4.6A and 4.5V Vgs, with a gate-source threshold voltage (Vgs(th)) of 1V at 250µA. The input capacitance (Ciss) is 1090pF at 10V Vds, and the gate charge (Qg) is a maximum of 25nC at 4.5V Vgs.
Packaged in a surface-mount SOT-23-3 (TO-236-3) package, the SI2323CDS-T1-GE3 is suitable for applications requiring space efficiency. It operates within a temperature range of -55°C to 150°C (TJ).
Key applications include load switching, PA switching, and DC/DC converters. The device is manufactured using TrenchFET technology.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 20V.
The continuous drain current is 6A at 25°C case temperature.
The Rds On is a maximum of 39mOhm at 4.6A drain current and 4.5V gate-source voltage.
This MOSFET is supplied in a SOT-23-3 (TO-236-3) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.