| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
723,200 pcs
|
723200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI2321DS-T1-E3 is a P-Channel MOSFET manufactured by Vishay Dale. This device is designed for surface mount applications and comes in a SOT-23-3 package.
Key electrical specifications include a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.9A at 25°C. The maximum on-resistance (Rds On) is 57mOhm at 3.3A and 4.5V gate-source voltage. The gate-source threshold voltage (Vgs(th)) is 900mV at 250µA.
This MOSFET operates within a temperature range of -55°C to 150°C. It features a maximum power dissipation of 710mW. The input capacitance (Ciss) is 715pF at 6V, and the gate charge (Qg) is 13nC at 4.5V.
The device is compliant with RoHS3 and REACH regulations and has a Moisture Sensitivity Level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the SI2321DS-T1-E3 is 20V.
The continuous drain current (Id) at 25°C for the SI2321DS-T1-E3 is 2.9A.
The maximum on-resistance (Rds On) for the SI2321DS-T1-E3 is 57mOhm at 3.3A and 4.5V.
The operating temperature range for the SI2321DS-T1-E3 is -55°C to 150°C.
The SI2321DS-T1-E3 is available in a SOT-23-3 surface mount package.