| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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133,926 pcs
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133926 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SI2319DS-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 40V and can handle a continuous drain current of 2.3A at ambient temperature. The on-resistance is rated at a maximum of 82mOhm at 3A drain current and 10V gate-source voltage.
This MOSFET operates within a temperature range of -55°C to 150°C. It utilizes TrenchFET technology and is housed in a compact SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs. The gate charge is 17nC maximum at 10V gate-source voltage, and the gate threshold voltage is 3V maximum at 250µA.
Key electrical characteristics include a gate-source voltage range of ±20V and a power dissipation of 750mW at ambient temperature. The component has a rise time of 15ns and a fall time of 25ns, with typical turn-on delay time of 7ns and turn-off delay time of 25ns. Its forward transconductance is a minimum of 7S.
This device is classified under the Si2 series and is manufactured by Vishay Dale. It is suitable for applications requiring efficient switching and power management in a small form factor.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
It is supplied in a SOT-23-3 (TO-236) package.
The operating temperature range is -55°C to 150°C.
Yes, it is RoHS3 Compliant.
The continuous drain current is 2.3A.
The maximum on-resistance is 82mOhm at 3A drain current and 10V gate-source voltage.
The gate charge is 17nC maximum at 10V gate-source voltage.