SI2319DS-T1-GE3 The Vishay Dale SI2319DS-T1-GE3 is a P-Channel MOSFET with a 40V drain-source breakdown voltage and 2.3A continuous drain current. It is supplied in a SOT-23-3 surface mount package.
Mfr Part #:

SI2319DS-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2319DS-T1-GE3 is a P-Channel MOSFET with a 40V drain-source breakdown voltage and 2.3A continuous drain current. It is supplied in a SOT-23-3 surface mount package.
✓ Total Stock: 133,926 pcs
$ Price Range: $0.99

SI2319DS-T1-GE3 Available from 1 distributor

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SI2319DS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Failure Rate
Gate Charge (Qg) (Max) @ Vgs
Height
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Length
Mounting Style
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Voltage
Width

SI2319DS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2319DS-T1-GE3 is a P-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 40V and can handle a continuous drain current of 2.3A at ambient temperature. The on-resistance is rated at a maximum of 82mOhm at 3A drain current and 10V gate-source voltage.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It utilizes TrenchFET technology and is housed in a compact SOT-23-3 (TO-236) surface mount package, making it suitable for space-constrained designs. The gate charge is 17nC maximum at 10V gate-source voltage, and the gate threshold voltage is 3V maximum at 250µA.

 

Key electrical characteristics include a gate-source voltage range of ±20V and a power dissipation of 750mW at ambient temperature. The component has a rise time of 15ns and a fall time of 25ns, with typical turn-on delay time of 7ns and turn-off delay time of 25ns. Its forward transconductance is a minimum of 7S.

 

This device is classified under the Si2 series and is manufactured by Vishay Dale. It is suitable for applications requiring efficient switching and power management in a small form factor.

SI2319DS-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si2
Canonical Name: Vishay Dale SI2319DS-T1-GE3 P-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

SI2319DS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2319DS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2319DS-T1-GE3 Features

  • 40V drain-source breakdown voltage.
  • 2.3A continuous drain current.
  • 82mOhm maximum on-resistance.
  • P-Channel MOSFET technology.
  • SOT-23-3 surface mount package.

SI2319DS-T1-GE3 Applications

  • Suitable for power switching circuits.
  • Ideal for space-constrained designs.
  • Used in battery management systems.
  • Applicable for load switching.

SI2319DS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage for the SI2319DS-T1-GE3?

The drain-source breakdown voltage is 40V.

What package type is the SI2319DS-T1-GE3 supplied in?

It is supplied in a SOT-23-3 (TO-236) package.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

Is the SI2319DS-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the continuous drain current for the SI2319DS-T1-GE3?

The continuous drain current is 2.3A.

What is the maximum on-resistance of the SI2319DS-T1-GE3?

The maximum on-resistance is 82mOhm at 3A drain current and 10V gate-source voltage.

What is the gate charge for the SI2319DS-T1-GE3?

The gate charge is 17nC maximum at 10V gate-source voltage.

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