SI2319DS-T1-E3 P-Channel MOSFET with 40V drain-source voltage and 2.3A continuous drain current. Packaged in SOT-23-3 for surface mount applications.
Mfr Part #:

SI2319DS-T1-E3

Available from 5 distributors
Mfr Name: Vishay
Vishay
P-Channel MOSFET with 40V drain-source voltage and 2.3A continuous drain current. Packaged in SOT-23-3 for surface mount applications.
✓ Total Stock: 207,835 pcs
$ Price Range: $0.99

SI2319DS-T1-E3 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

SI2319DS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2319DS-T1-E3 Description

Short technical summary and product information.

The SI2319DS-T1-E3 is a P-Channel MOSFET manufactured by Vishay Dale. It features a maximum drain-source voltage of 40V and a continuous drain current of 2.3A at ambient temperature. The device has a maximum on-resistance of 82mOhm when driven with 10V gate-source voltage and 3A drain current. Gate charge is specified at 17nC for 10V gate drive, enabling efficient switching in low to medium power applications. The MOSFET is housed in a compact SOT-23-3 surface-mount package, also known as TO-236-3 or SC-59, making it suitable for space-constrained designs. Operating temperature range spans from -55°C to 150°C, allowing use in harsh environments. This P-Channel MOSFET is well-suited for high-side load switching, power management, and battery protection circuits where low voltage drop and small footprint are required.

SI2319DS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2319DS-T1-E3 P-Channel MOSFET
Subcategory: Single

SI2319DS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI2319DS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2319DS-T1-E3 Features

  • Maximum drain-source voltage of 40V.
  • Continuous drain current rating of 2.3A.
  • Low on-resistance of 82mOhm at 10V gate drive.
  • Surface mount SOT-23-3 package.
  • Operating temperature range of -55°C to 150°C.

SI2319DS-T1-E3 Applications

  • Suitable for high-side load switching.
  • Used in power management circuits.
  • Ideal for battery powered device protection.
  • Applicable in DC-DC converter designs.

SI2319DS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI2319DS-T1-E3?

The maximum drain-source voltage is 40V.

What package does the SI2319DS-T1-E3 come in?

It is available in the SOT-23-3 surface mount package (TO-236-3, SC-59, SOT-23-3).

What is the operating temperature range of the SI2319DS-T1-E3?

-55°C to 150°C.

What is the maximum continuous drain current?

2.3A at ambient temperature.

What is the maximum gate threshold voltage?

3V at 250µA drain current.

What is the on-resistance of the SI2319DS-T1-E3?

82mOhm maximum at 3A drain current and 10V gate-source voltage.

What is the maximum gate charge?

17nC at 10V gate-source voltage.

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