SI2319DS-T1-BE3 The Vishay Dale SI2319DS-T1-BE3 is a P-Channel MOSFET with a 40V drain-source voltage and a low on-resistance of 82mΩ at 10V gate-source voltage. It is supplied in a SOT-23-3 package.
Mfr Part #:

SI2319DS-T1-BE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2319DS-T1-BE3 is a P-Channel MOSFET with a 40V drain-source voltage and a low on-resistance of 82mΩ at 10V gate-source voltage. It is supplied in a SOT-23-3 package.
✓ Total Stock: 4,269 pcs
$ Price Range: $0.99

SI2319DS-T1-BE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,020 pcs
4020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
249 pcs
249 pcs On Request 1 On Request On Request On Request On Request On Request

SI2319DS-T1-BE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2319DS-T1-BE3 Description

Short technical summary and product information.

The Vishay Dale SI2319DS-T1-BE3 is a P-Channel TrenchFET® Power MOSFET designed for load switch applications. It features a maximum drain-source voltage (Vds) of 40V and a low on-state resistance (Rds On) of 82mΩ when driven at 10V gate-source voltage and 3A drain current. At a lower gate-source voltage of 4.5V, the Rds On is 130mΩ with a drain current of 2.4A.

 

This MOSFET can handle a continuous drain current of 2.3A at 25°C ambient temperature and has a maximum power dissipation of 750mW under the same conditions. The operating temperature range is from -55°C to 150°C.

 

The device is packaged in a compact TO-236-3, SC-59, SOT-23-3 surface mount package, making it suitable for space-constrained designs. It also offers halogen-free compliance.

SI2319DS-T1-BE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si2319DS P-Channel 40-V MOSFET
Subcategory: P-Channel

SI2319DS-T1-BE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2319DS-T1-BE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2319DS-T1-BE3 Features

  • P-Channel 40V (D-S) MOSFET.
  • Low Rds(on) of 82mΩ at 10Vgs.
  • Continuous drain current of 2.3A.
  • SOT-23-3 surface mount package.
  • Halogen-free compliance.

SI2319DS-T1-BE3 Applications

  • Ideal for load switch applications.
  • Suitable for power management circuits.
  • Used in battery-powered devices.
  • Applicable in portable electronics.

SI2319DS-T1-BE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI2319DS-T1-BE3?

The maximum drain-source voltage (Vds) for the SI2319DS-T1-BE3 is 40V.

What is the Rds(on) of the SI2319DS-T1-BE3 at 10V gate-source voltage?

The Rds(on) is a maximum of 82mΩ at a drain current of 3A and a gate-source voltage of 10V.

What is the continuous drain current for the SI2319DS-T1-BE3?

The continuous drain current is 2.3A at 25°C ambient temperature.

What is the operating temperature range of the SI2319DS-T1-BE3?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI2319DS-T1-BE3 supplied in?

The SI2319DS-T1-BE3 is supplied in a TO-236-3, SC-59, SOT-23-3 package.

Is the SI2319DS-T1-BE3 RoHS compliant?

Yes, the SI2319DS-T1-BE3 is RoHS3 Compliant.

Does the SI2319DS-T1-BE3 meet Halogen-free requirements?

Yes, the SI2319DS-T1-BE3 is Halogen-free.

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