| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
904,000 pcs
|
904000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
49,020 pcs
|
49020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,774 pcs
|
2774 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
26 pcs
|
26 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2319DDS-T1-GE3 is a P-Channel power MOSFET designed for various switching applications. It features a TrenchFET Gen III technology, offering enhanced performance and reliability.
Key electrical specifications include a drain-source breakdown voltage of -40V and a maximum continuous drain current of -3.6A at 25°C case temperature. The on-resistance is as low as 75mOhm at a gate-source voltage of 10V, and 100mOhm at 4.5V. The typical gate charge is 6nC.
This MOSFET is housed in a SOT-23 (TO-236) surface-mount package, making it suitable for space-constrained designs. It operates within a junction temperature range of -55°C to +150°C. The device is 100% Rg and UIS tested, ensuring high quality and performance.
Applications for the SI2319DDS-T1-GE3 include battery switches, motor drive control, and load switching. It is also available in lead (Pb)-free and halogen-free configurations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -40 V minimum.
Continuous drain current is -3.6 A at TC=25°C and -2.7 A at TA=25°C.
The package is SOT-23-3 (TO-236).
The operating junction and storage temperature range is -55°C to 150°C.
Maximum on-resistance is 75 mOhm at VGS=10V, ID=2.7A and 100 mOhm at VGS=4.5V, ID=2.7A.
Maximum gate-source threshold voltage is 2.5 V at ID=250µA.
Maximum input capacitance is 650 pF at VDS=20V.