SI2319CDS-T1-GE3 The Vishay SI2319CDS-T1-GE3 is a P-Channel MOSFET with a 40V drain-source voltage and 4.4A continuous drain current. It is supplied in a SOT-23-3 package.
Mfr Part #:

SI2319CDS-T1-GE3

Available from 7 distributors
Mfr Name: Vishay
Vishay
The Vishay SI2319CDS-T1-GE3 is a P-Channel MOSFET with a 40V drain-source voltage and 4.4A continuous drain current. It is supplied in a SOT-23-3 package.
✓ Total Stock: 423,523 pcs
$ Price Range: $0.99

SI2319CDS-T1-GE3 Available from 7 distributors

✓ Authorised
✓ Non-Authorised

SI2319CDS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2319CDS-T1-GE3 Description

Short technical summary and product information.

The Vishay SI2319CDS-T1-GE3 is a P-Channel Power MOSFET designed for applications such as load switching and DC/DC converters. It features a drain-source breakdown voltage of 40V and a continuous drain current of 4.4A at 25°C case temperature.

 

This MOSFET offers a low on-state resistance of 77mΩ at a gate-source voltage of -10V and a drain current of -3.1A. The gate charge is typically 7nC at VGS = -10V. The device operates over a temperature range of -55°C to 150°C.

 

Packaged in a compact SOT-23-3 (TO-236) surface-mount package, the SI2319CDS-T1-GE3 is suitable for space-constrained designs. It is manufactured using TrenchFET technology and is compliant with RoHS Directive 2002/95/EC and Halogen-free standards.

SI2319CDS-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si2
Canonical Name: Vishay Siliconix Si2319CDS P-Channel 40V MOSFET
Subcategory: P-Channel

SI2319CDS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2319CDS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2319CDS-T1-GE3 Features

  • P-Channel 40V MOSFET for power switching.
  • 4.4A continuous drain current capability.
  • Low Rds(on) of 77mΩ at 10V gate drive.
  • Compact SOT-23-3 surface-mount package.
  • Halogen-free and RoHS3 compliant.

SI2319CDS-T1-GE3 Applications

  • Load switch applications
  • DC/DC converter circuits
  • P-channel power management
  • Battery protection systems
  • Portable device power switching

SI2319CDS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the SI2319CDS-T1-GE3?

The drain-source breakdown voltage is 40V.

What is the continuous drain current for the SI2319CDS-T1-GE3?

The continuous drain current is 4.4A at 25°C case temperature.

What is the Rds On for the SI2319CDS-T1-GE3?

The Rds On is a maximum of 77mΩ at a gate-source voltage of -10V and a drain current of -3.1A.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI2319CDS-T1-GE3 supplied in?

It is supplied in a SOT-23-3 (TO-236) package.

Is the SI2319CDS-T1-GE3 RoHS compliant?

Yes, it is RoHS3 compliant.

Is the SI2319CDS-T1-GE3 Halogen-free?

Yes, it is Halogen-free.

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