| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
212,706 pcs
|
212706 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Lead Style | |
| SVHC Present | |
| Storage Temperature |
The Vishay Dale SI2319CDS is a P-Channel MOSFET designed for applications such as load switching and DC/DC converters. It operates with a drain-source voltage of -40V and a gate-source voltage range of ±20V.
Key electrical characteristics include a maximum drain-source on-state resistance of 0.077 Ohms at a gate-source voltage of -10V and a continuous drain current of up to -4.4A at 25°C case temperature. The device also features a typical input capacitance of 595pF and output capacitance of 76pF.
Packaged in a TO-236 (SOT-23) surface-mount package, the Si2319CDS is suitable for space-constrained designs. It is compliant with RoHS Directive 2002/95/EC and is halogen-free.
This MOSFET is built using Vishay's TrenchFET technology, offering high performance and reliability for power management tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -40V.
The typical gate-source threshold voltage is -1.2V.
The maximum drain-source on-state resistance is 0.077 Ohms.
The SI2319CDS is supplied in a TO-236 (SOT-23) package.
Yes, the SI2319CDS is RoHS3 Compliant.
The operating junction and storage temperature range is -55°C to 150°C.