| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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814 pcs
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814 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gate Charge | |
| Input Capacitance | |
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| Power Dissipation |
The JSMSEMI SI2319 is a P-Channel MOSFET housed in a compact SOT-23 package. This component is suitable for a range of electronic applications requiring efficient switching and power management.
Key electrical specifications include a Drain to Source Voltage (Vds) of 40V and a Continuous Drain Current (Id) of 5A. The device offers a low On-Resistance (Rds(on)) of 62mΩ at 10V, ensuring minimal power loss during operation. Its Gate Threshold Voltage (Vgs(th)) is 1.6V, and it has a Gate Charge (Qg) of 5.4nC at 10V.
The MOSFET has a Power Dissipation (Pd) rating of 1W. Input Capacitance (Ciss) is 310pF, and Output Capacitance (Coss) is 22pF. The component is designed for SMT (Surface Mount Technology) assembly.
Environmental compliance information indicates RoHS3 compliance and an MSL rating of 1. The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain to Source Voltage is 40V.
The Continuous Drain Current is 5A.
The On-Resistance is 62mΩ at 10V.
The Gate Threshold Voltage is 1.6V.
The package type is SOT-23.
The SI2319 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.