SI2318DS-T1-GE3 Vishay Dale SI2318DS-T1-GE3 is an N-Channel MOSFET with 40V maximum drain-source voltage, 3A continuous drain current, and 45mOhm on-resistance. It comes in a surface-mount SOT-23-3 package.
Mfr Part #:

SI2318DS-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
Vishay Dale SI2318DS-T1-GE3 is an N-Channel MOSFET with 40V maximum drain-source voltage, 3A continuous drain current, and 45mOhm on-resistance. It comes in a surface-mount SOT-23-3 package.
✓ Total Stock: 1,130,015 pcs
$ Price Range: $0.99

SI2318DS-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,130,000 pcs
1130000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
15 pcs
15 pcs On Request 1 On Request On Request 2232 On Request On Request

SI2318DS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2318DS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2318DS-T1-GE3 is an N-Channel MOSFET built using Metal Oxide technology. It features a maximum drain-source voltage (Vdss) of 40 V and a maximum continuous drain current of 3 A at ambient temperature. The device can dissipate up to 750 mW of power. It offers a low maximum on-resistance of 45 mOhm when driven with a gate-source voltage of 10 V at 3.9 A drain current. The gate threshold voltage is a maximum of 3 V at 250 µA drain current. Input capacitance is 540 pF at 20 V drain-source, and total gate charge is 15 nC at 10 V gate-source. The device is designed for surface-mount assembly and is available in a compact SOT-23-3 package (also known as TO-236-3 or SC-59). The operating junction temperature range covers -55°C to 150°C, suitable for a wide range of environments.

SI2318DS-T1-GE3 Quick Information

Product Type: Single MOSFET
Canonical Name: Vishay Dale SI2318DS-T1-GE3 N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

SI2318DS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2318DS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2318DS-T1-GE3 Features

  • N-Channel MOSFET with 40V drain-source voltage.
  • Maximum continuous drain current of 3A.
  • Low on-resistance of 45 mOhm at 10V Vgs.
  • Compact surface-mount SOT-23-3 package.
  • Wide operating temperature -55 to 150°C.

SI2318DS-T1-GE3 Applications

  • Suitable for load switching in portable devices.
  • Ideal for DC-DC converter power stages.
  • Used in battery management and protection.
  • Applicable for low-voltage motor control.

SI2318DS-T1-GE3 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the SI2318DS-T1-GE3?

The maximum drain-source voltage is 40 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 3 A at ambient temperature.

What package type is the SI2318DS-T1-GE3 available in?

It is available in an SOT-23-3 surface-mount package (also known as TO-236-3 and SC-59).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the typical on-resistance of this MOSFET?

The maximum on-resistance is 45 mOhm at Id = 3.9 A and Vgs = 10 V.

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