SI2318DS-T1-E3 The Vishay Dale SI2318DS-T1-E3 is an N-Channel MOSFET with a 40V drain-source voltage and 3A continuous current rating. It is supplied in a SOT-23-3 package.
Mfr Part #:

SI2318DS-T1-E3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2318DS-T1-E3 is an N-Channel MOSFET with a 40V drain-source voltage and 3A continuous current rating. It is supplied in a SOT-23-3 package.
✓ Total Stock: 7,228 pcs
$ Price Range: $0.99

SI2318DS-T1-E3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SI2318DS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2318DS-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI2318DS-T1-E3 is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 3A at ambient temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 45mOhm at 3.9A and 10V Vgs, a gate threshold voltage (Vgs(th)) of 3V at 250µA, and a gate charge (Qg) of 15nC at 10V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 750mW (Ta). It is packaged in a SOT-23-3 (TO-236) surface-mount case.

 

The device is specified as RoHS3 compliant, with an MSL rating of 1, and REACH unaffected.

SI2318DS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2318DS-T1-E3 N-Channel MOSFET
Subcategory: Single

SI2318DS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2318DS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2318DS-T1-E3 Features

  • 40V drain-source voltage rating.
  • 3A continuous drain current.
  • Low 45mOhm Rds On at 3.9A.
  • SOT-23-3 surface mount package.
  • RoHS3 compliant.

SI2318DS-T1-E3 Applications

  • Suitable for low voltage switching.
  • Used in power management circuits.
  • Ideal for portable electronics.
  • Applicable in DC-DC converters.

SI2318DS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the SI2318DS-T1-E3?

The maximum drain-source voltage is 40V.

What is the continuous drain current rating?

The continuous drain current is 3A at ambient temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 45mOhm at 3.9A drain current and 10V gate drive.

What is the gate threshold voltage?

The maximum gate threshold voltage is 3V at 250µA drain current.

What is the gate charge of the SI2318DS-T1-E3?

The maximum gate charge is 15nC at 10V gate voltage.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the SI2318DS-T1-E3 available in?

It is available in a surface mount SOT-23-3 package (also TO-236-3, SC-59).

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