| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,020 pcs
|
10020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This Vishay Dale SI2318CDS-T1-BE3 is a single N-Channel MOSFET designed for various electronic applications. It operates with a drain-to-source voltage (Vdss) of 40V and a maximum gate-source voltage (Vgs) of ±20V. The MOSFET type is N-Channel, utilizing Metal Oxide Semiconductor technology.
Key electrical characteristics include a maximum on-resistance (Rds On) of 42mOhm at 4.3A and 10V Vgs. The input capacitance (Ciss) is 340 pF at 20V, and the gate charge (Qg) is 9 nC at 10V Vgs. The gate threshold voltage (Vgs(th)) is a maximum of 2.5V at 250µA.
This component is housed in a surface mount SOT-23-3 (TO-236) package. It can dissipate up to 1.25W at 25°C ambient temperature (Ta) or 2.1W at 25°C case temperature (Tc). The operating temperature range is from -55°C to 150°C (TJ).
The RoHS status is listed as RoHS3 Compliant, Moisture Sensitivity Level (MSL) is 1 Unlimited, and REACH status is REACH Unaffected. However, these compliance statuses are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40 V.
4.3 A at 25°C ambient temperature (Ta) and 5.6 A at 25°C case temperature (Tc).
42 mOhm maximum at Id = 4.3 A and Vgs = 10 V.
SOT-23-3 (also known as TO-236-3 or SC-59) surface-mount package.
-55°C to 150°C junction temperature.
2.5 V maximum at Id = 250 µA.