| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,725 pcs
|
8725 pcs | On Request | 1 | On Request | On Request | 1012+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Siliconix SI2316DS-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage rating. It features a low on-resistance of 50mOhm at 3.4A and 10V Vgs, and 85mOhm at 2.6A and 4.5V Vgs. The device operates within a temperature range of -55°C to 150°C.
This MOSFET is housed in a compact TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting. Key electrical characteristics include a gate-source voltage range of ±20V and a gate threshold voltage of 0.8V. Its input capacitance is 215pF, output capacitance is 90pF, and reverse transfer capacitance is 55pF.
The device is RoHS3 compliant and available in lead-free and halogen-free options. It is designed for applications requiring efficient switching and power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The maximum continuous drain current is 2.9A at 25°C.
The Rds On (Max) is 50mOhm at 3.4A and 10V Vgs.
The operating junction and storage temperature range is -55°C to 150°C.
It is available in a TO-236-3, SC-59, SOT-23-3 package.