SI2316BDS-T1-GE3 The Vishay Dale SI2316BDS-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 4.5A continuous drain current. It is designed for surface mounting in a SOT-23-3 package.
Mfr Part #:

SI2316BDS-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2316BDS-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 4.5A continuous drain current. It is designed for surface mounting in a SOT-23-3 package.
✓ Total Stock: 91 pcs
$ Price Range: $0.99

SI2316BDS-T1-GE3 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
75 pcs
75 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
16 pcs
16 pcs On Request 1 On Request On Request On Request On Request On Request

SI2316BDS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2316BDS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2316BDS-T1-GE3 is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 4.5A at 25°C case temperature.

 

This MOSFET offers a low on-state resistance (Rds On) of 50mOhm at 3.9A and 10V Vgs, and 80mOhm at 3.3A and 4.5V Vgs. The input capacitance (Ciss) is 350pF at 15V, and the typical gate charge (Qg) is 3.16nC at 10V.

 

With a maximum power dissipation of 1.66W (Tc) or 1.25W (Ta), it operates within a temperature range of -55°C to 150°C. The device is housed in a compact TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting.

 

Key features include its TrenchFET Power MOSFET technology, PWM optimization, and 100% R g tested. It is compliant with RoHS Directive 2002/95/EC and is halogen-free.

SI2316BDS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 30V MOSFET
Subcategory: N-Channel

SI2316BDS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2316BDS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2316BDS-T1-GE3 Features

  • N-Channel 30V MOSFET.
  • Low Rds On resistance.
  • Surface mount SOT-23-3 package.
  • Halogen-free and RoHS compliant.
  • PWM optimized TrenchFET technology.

SI2316BDS-T1-GE3 Applications

  • Ideal for battery switch applications.
  • Suitable for DC/DC converters.
  • Used in power management circuits.
  • General purpose switching applications.

SI2316BDS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI2316BDS-T1-GE3?

The maximum drain-source voltage is 30V.

What is the continuous drain current of the SI2316BDS-T1-GE3?

The continuous drain current is 4.5A at 25°C case temperature.

What is the Rds On (Max) for the SI2316BDS-T1-GE3?

The Rds On is a maximum of 50mOhm at 3.9A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the SI2316BDS-T1-GE3 in?

It is in a TO-236-3, SC-59, SOT-23-3 package.

Is the SI2316BDS-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Is this MOSFET halogen-free?

Yes, it is halogen-free.

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