SI2316BDS-T1-E3 The Vishay Dale SI2316BDS-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 4.5A. It is supplied in a SOT-23-3 package.
Mfr Part #:

SI2316BDS-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2316BDS-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 4.5A. It is supplied in a SOT-23-3 package.
✓ Total Stock: 10,020 pcs
$ Price Range: $0.99

SI2316BDS-T1-E3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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10,020 pcs
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SI2316BDS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2316BDS-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI2316BDS-T1-E3 is an N-Channel Power MOSFET designed for applications such as battery switches and DC/DC converters. It features a 30V drain-source breakdown voltage and a low on-state resistance, with Rds(on) as low as 0.050 Ω at VGS = 10V. The device can handle a continuous drain current of up to 4.5A at 25°C case temperature.

 

This MOSFET is housed in a compact TO-236-3, SC-59, SOT-23-3 surface-mount package, making it suitable for space-constrained designs. It operates within a temperature range of -55°C to 150°C (TJ). The device is also compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition.

 

Key electrical characteristics include an input capacitance of 350 pF, a total gate charge of 3.16 nC (typical), and a gate-source threshold voltage of 3V maximum. The maximum power dissipation is rated at 1.25W (Ta) and 1.66W (Tc).

SI2316BDS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2316BDS-T1-E3 N-Channel 30V MOSFET
Subcategory: N-Channel

SI2316BDS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2316BDS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2316BDS-T1-E3 Features

  • 30V N-Channel Power MOSFET.
  • Low Rds(on) down to 0.050 Ohm.
  • 4.5A continuous drain current.
  • SOT-23-3 surface mount package.
  • Halogen-free and RoHS3 compliant.

SI2316BDS-T1-E3 Applications

  • Ideal for battery switch applications.
  • Suitable for DC/DC converters.
  • Used in power management circuits.
  • Compact solution for space-limited designs.

SI2316BDS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI2316BDS-T1-E3?

The drain-source breakdown voltage is 30V.

What is the maximum continuous drain current for the SI2316BDS-T1-E3?

The maximum continuous drain current is 4.5A at 25°C case temperature.

What is the Rds(on) of the SI2316BDS-T1-E3?

The Rds(on) is 0.050 Ohm maximum at 3.9A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI2316BDS-T1-E3 supplied in?

It is supplied in a TO-236-3, SC-59, SOT-23-3 package.

Is the SI2316BDS-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Is the SI2316BDS-T1-E3 halogen-free?

Yes, it is Halogen-free.

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