SI2315BDS-T1-E3 The Vishay Dale SI2315BDS-T1-E3 is a P-Channel MOSFET designed for 12V operation. It features a 3A continuous drain current and a low 50mOhm on-resistance.
Mfr Part #:

SI2315BDS-T1-E3

Available from 6 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2315BDS-T1-E3 is a P-Channel MOSFET designed for 12V operation. It features a 3A continuous drain current and a low 50mOhm on-resistance.
✓ Total Stock: 50,189 pcs
$ Price Range: $0.99

SI2315BDS-T1-E3 Available from 6 distributors

✓ Authorised
✓ Non-Authorised

SI2315BDS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2315BDS-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI2315BDS-T1-E3 is a P-Channel MOSFET with a drain-source voltage (Vdss) of 12V and a continuous drain current (Ta) of 3A. It offers a low on-resistance (Rds On) of 50mOhm at 3.85A and 4.5V.

 

This MOSFET operates within a temperature range of -55°C to 150°C and has a gate charge (Qg) of 15nC at 4.5V. The input capacitance (Ciss) is 715pF at 6V, and the gate threshold voltage (Vgs(th)) is a maximum of 900mV at 250µA. The maximum gate-source voltage (Vgs) is ±8V.

 

Packaged in a SOT-23-3 (TO-236) surface mount package, the SI2315BDS-T1-E3 is suitable for various electronic applications requiring efficient switching and power management. Its power dissipation is rated at 750mW (Ta).

SI2315BDS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2315BDS-T1-E3 P-Channel MOSFET
Subcategory: Single

SI2315BDS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2315BDS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2315BDS-T1-E3 Features

  • P-Channel MOSFET with 12V Vdss.
  • 3A continuous drain current capability.
  • Low 50mOhm Rds On at 4.5V.
  • Surface mount SOT-23-3 package.
  • Wide -55°C to 150°C operating temperature.

SI2315BDS-T1-E3 Applications

  • Suitable for power switching circuits.
  • Ideal for voltage regulation tasks.
  • Used in battery management systems.
  • Applicable in load switch designs.

SI2315BDS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for SI2315BDS-T1-E3?

12 V.

What is the maximum continuous drain current?

3 A at 25°C ambient temperature.

What is the package type?

SOT-23-3 (TO-236) surface-mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What is the gate threshold voltage?

Maximum 900 mV at 250 µA drain current.

What is the typical drive voltage?

1.8 V for minimum on-resistance, 4.5 V for maximum on-resistance.

What is the maximum on-resistance?

50 mOhm at a gate voltage of 4.5 V and drain current of 3.85 A.

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