SI2314EDS-T1-E3 The Vishay Dale SI2314EDS-T1-E3 is an N-Channel MOSFET designed for various applications. It features a 20V drain-source voltage and a continuous drain current of 3.77A.
Mfr Part #:

SI2314EDS-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2314EDS-T1-E3 is an N-Channel MOSFET designed for various applications. It features a 20V drain-source voltage and a continuous drain current of 3.77A.
✓ Total Stock: 2,261,689 pcs
$ Price Range: $0.99

SI2314EDS-T1-E3 Available from 3 distributors

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✓ Non-Authorised
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2,260,000 pcs
2260000 pcs On Request 1 On Request On Request On Request On Request On Request
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980 pcs
980 pcs On Request 1 On Request On Request On Request On Request On Request
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709 pcs
709 pcs On Request 1 On Request On Request 1851+ On Request On Request

SI2314EDS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2314EDS-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI2314EDS-T1-E3 is an N-Channel MOSFET with a drain-source voltage of 20V. It offers a continuous drain current of 3.77A at 25°C ambient temperature and a maximum power dissipation of 750mW.

 

This MOSFET has a low on-resistance, with a maximum of 33mOhm at a gate-source voltage of 4.5V and a drain current of 5A. The gate threshold voltage is a maximum of 950mV at 250µA, and the gate-source voltage can be up to ±12V.

 

Packaged in a TO-236-3, SC-59, SOT-23-3 surface mount package, the SI2314EDS-T1-E3 operates within a temperature range of -55°C to 150°C. It is also noted as being halogen-free.

 

Key electrical characteristics include a gate charge of 14nC at 4.5V and a drain-source breakdown voltage of 20V. This component is suitable for applications requiring efficient switching and power management.

SI2314EDS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si2314EDS N-Channel 20V MOSFET
Subcategory: Single

SI2314EDS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI2314EDS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2314EDS-T1-E3 Features

  • N-Channel 20V MOSFET
  • Low Rds On: 33mOhm at 4.5V
  • Continuous Drain Current: 3.77A
  • SOT-23-3 Surface Mount Package
  • Halogen-free construction

SI2314EDS-T1-E3 Applications

  • Ideal for battery protection circuits
  • Suitable for power management tasks
  • Used in low voltage switching applications
  • Efficient power control applications

SI2314EDS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI2314EDS-T1-E3?

The drain-source breakdown voltage is 20V.

What is the maximum gate-threshold voltage for this MOSFET?

The maximum gate-threshold voltage is 0.95V at 250µA.

What is the maximum continuous drain current?

The maximum continuous drain current is 4.9A at 25°C.

What is the maximum Rds On at 4.5V Vgs?

The maximum Rds On is 33mOhm at 5A drain current and 4.5V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package type is the SI2314EDS-T1-E3 available in?

It is available in a TO-236-3, SC-59, SOT-23-3 surface mount package.

Is this MOSFET halogen-free?

Yes, this MOSFET is halogen-free.

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