SI2312BDS-T1-E3 The Vishay Dale SI2312BDS-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 3.9A continuous current capability. It is housed in a surface-mount SOT-23-3 package.
Mfr Part #:

SI2312BDS-T1-E3

Available from 8 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2312BDS-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 3.9A continuous current capability. It is housed in a surface-mount SOT-23-3 package.
✓ Total Stock: 196,967 pcs
$ Price Range: $0.99

SI2312BDS-T1-E3 Available from 8 distributors

✓ Authorised
✓ Non-Authorised

SI2312BDS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2312BDS-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI2312BDS-T1-E3 is a 20V N-Channel MOSFET designed for various electronic applications. It features a low on-resistance of 31mOhm at a gate-source voltage of 4.5V and a continuous drain current rating of 3.9A at 25°C ambient temperature.

 

This MOSFET utilizes TrenchFET technology for improved performance and efficiency. It operates within a temperature range of -55°C to 150°C and is packaged in a compact TO-236-3 (SOT-23-3) surface-mount package, making it suitable for space-constrained designs.

 

Key electrical characteristics include a gate charge of 7.5 nC typical at 4.5V and a gate threshold voltage of 850mV maximum at 250µA. The device is compliant with RoHS directives and offers a moisture sensitivity level of 1.

SI2312BDS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si2312BDS N-Channel 20V TrenchFET Power MOSFET
Subcategory: N-Channel

SI2312BDS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2312BDS-T1-E3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2312BDS-T1-E3 Features

  • 20V drain-source voltage rating.
  • 3.9A continuous drain current.
  • Low 31mOhm Rds(on) at 4.5V.
  • Surface mount SOT-23-3 package.
  • Halogen-free and RoHS3 compliant.

SI2312BDS-T1-E3 Applications

  • Suitable for power switching applications.
  • Ideal for space-constrained designs.
  • Used in general purpose electronics.
  • Efficient power management solutions.

SI2312BDS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the SI2312BDS-T1-E3?

The drain-to-source voltage (Vds) is 20V.

What is the continuous drain current for the SI2312BDS-T1-E3?

The continuous drain current is 3.9A at 25°C ambient temperature.

What is the typical on-resistance of this MOSFET?

The typical on-resistance is 31mOhm at a drain current of 5A and gate-source voltage of 4.5V.

What is the operating temperature range for the SI2312BDS-T1-E3?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI2312BDS-T1-E3 available in?

It is available in a TO-236-3, SC-59, SOT-23-3 surface mount package.

Is the SI2312BDS-T1-E3 RoHS compliant?

Yes, it is RoHS3 compliant.

Is this MOSFET halogen-free?

Yes, it is halogen-free.

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