| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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296 pcs
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296 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
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| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI2312-TP is an N-Channel MOSFET from Micro Commercial Components. It is designed for general-purpose switching applications. Key specifications include a maximum drain-source voltage of 20V and a continuous drain current of 5A at 25°C ambient temperature.
The device features a low on-resistance of 41mOhm maximum at a gate-source voltage of 1.8V and drain current of 4.3A. The gate threshold voltage is 1V maximum at 250µA. Input capacitance is 865pF at 10V drain-source voltage.
The MOSFET is housed in a SOT23 surface-mount package, suitable for compact designs. It can operate over a junction temperature range of -55°C to 150°C. Maximum power dissipation is 350mW at 25°C ambient.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
5A at 25°C ambient temperature.
41mOhm maximum at a drain current of 4.3A and gate-source voltage of 1.8V.
1V maximum at a drain current of 250µA.
350mW maximum at 25°C ambient temperature.
-55°C to 150°C junction temperature.
SOT23.