| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
258,286 pcs
|
258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
165 pcs
|
165 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2309DS-T1-E3 is a P-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 1.25A at ambient temperature. The MOSFET has a gate threshold voltage (Vgs(th)) of 1V at 250µA and a maximum gate-source voltage (Vgs) of ±20V.
With an on-resistance (Rds On) of 340mOhm at 1.25A and 10V, and a gate charge (Qg) of 12nC at 10V, this component offers efficient switching characteristics. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 1.25W (Ta).
The device is packaged in a TO-236-3, SC-59, SOT-23-3 configuration, suitable for surface mounting. Its technology is MOSFET (Metal Oxide), and it is classified as a P-Channel FET.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 60 V.
The continuous drain current is 1.25A.
The operating temperature range is -55°C to 150°C.
It is supplied in a TO-236-3, SC-59, SOT-23-3 package.
Yes, it is RoHS3 Compliant.
The MSL is 1 Unlimited.