SI2309CDS-T1-GE3 The Vishay Dale SI2309CDS-T1-GE3 is a P-Channel MOSFET with a 60V drain-source voltage and 1.6A continuous drain current. It is packaged in a SOT-23-3.
Mfr Part #:

SI2309CDS-T1-GE3

Available from 6 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2309CDS-T1-GE3 is a P-Channel MOSFET with a 60V drain-source voltage and 1.6A continuous drain current. It is packaged in a SOT-23-3.
✓ Total Stock: 1,850,369 pcs
$ Price Range: $0.99

SI2309CDS-T1-GE3 Available from 6 distributors

✓ Authorised
✓ Non-Authorised

SI2309CDS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Number of Channels
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2309CDS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2309CDS-T1-GE3 is a P-Channel MOSFET designed for load switch applications. It features a drain-source breakdown voltage of 60V and a continuous drain current of 1.6A at 25°C case temperature.

 

The MOSFET offers a low on-state resistance of 345mOhm at 1.25A drain current and 10V gate-source voltage. It operates within a temperature range of -55°C to 150°C and is housed in a compact SOT-23-3 (TO-236) surface-mount package.

 

Key electrical characteristics include a gate charge of 4.1 nC and an input capacitance of 210 pF. The device utilizes TrenchFET technology for enhanced performance. It is available in a lead-free and halogen-free option.

SI2309CDS-T1-GE3 Quick Information

Product Type: MOSFET
Series: Si2
Canonical Name: Vishay Dale Si2309CDS-T1-GE3 P-Channel 60V 1.6A SOT-23 MOSFET
Subcategory: Single

SI2309CDS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI2309CDS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2309CDS-T1-GE3 Features

  • P-Channel 60V MOSFET
  • 1.6A continuous drain current
  • Low Rds(on) of 345mOhm
  • SOT-23-3 surface-mount package
  • Halogen-free option available

SI2309CDS-T1-GE3 Applications

  • Ideal for load switch applications
  • Suitable for power management circuits
  • Used in battery-powered devices
  • General purpose switching tasks

SI2309CDS-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI2309CDS-T1-GE3?

The drain-source breakdown voltage is 60V.

What is the continuous drain current of the SI2309CDS-T1-GE3?

The continuous drain current is 1.6A at 25°C case temperature.

What is the maximum on-state resistance (Rds(on)) for this MOSFET?

The maximum Rds(on) is 345mOhm at 1.25A drain current and 10V gate-source voltage.

What is the operating temperature range for the SI2309CDS-T1-GE3?

The operating temperature range is -55°C to 150°C.

What package type is the SI2309CDS-T1-GE3 MOSFET supplied in?

It is supplied in a SOT-23-3 package.

Is the SI2309CDS-T1-GE3 available in a halogen-free option?

Yes, a halogen-free option is available.

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