| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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265,882 pcs
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265882 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SI2309CDS-T1-GE is a P-Channel MOSFET belonging to the Si2 series. This component is housed in a compact SOT-23-3 surface-mount package, making it suitable for space-constrained designs.
Key electrical characteristics include a drain-source breakdown voltage (Vds) of 60V and a continuous drain current (Id) of 1.6A. The gate-source threshold voltage (Vgs th) is 1V, and the gate-source voltage (Vgs) is rated at 10V. It features a low drain-source on-resistance (Rds On) of 345 mOhms and a gate charge (Qg) of 4.1 nC. The MOSFET operates with an enhancement channel mode.
Thermal specifications indicate a minimum operating temperature of -55°C and a maximum operating temperature of +150°C, with a power dissipation (Pd) of 1.7W. The component exhibits a rise time of 10ns and a fall time of 10ns, with a typical turn-on delay time of 5ns and a typical turn-off delay time of 15ns.
This MOSFET is manufactured using Silicon technology and is supplied in cut tape packaging. Its dimensions are 2.9mm in length, 1.6mm in width, and 1.45mm in height.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The continuous drain current is 1.6A.
The Rds On is 345 mOhms.
The gate-source threshold voltage is 1V.
The operating temperature range is from -55°C to +150°C.
The MOSFET is supplied in a SOT-23-3 package.
The gate charge is 4.1 nC.