| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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258,286 pcs
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258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Siliconix SI2308DS-T1-GE3 is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 1.9A at 25°C.
This MOSFET is packaged in a compact SOT-23 case, making it suitable for space-constrained designs. Key electrical characteristics include a gate-threshold voltage ranging from 1.0V to 3.0V and a low on-resistance, with a maximum of 0.160Ω at VGS = 10V.
The operating junction and storage temperature range is from -55°C to 150°C. The device also offers dynamic characteristics such as input capacitance up to 240pF and total gate charge up to 10nC.
This component is suitable for general-purpose switching applications where efficient power management is required. Its SOT-23 package facilitates surface-mount assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 60V.
The continuous drain current at 25°C is 1.9A.
The package type is SOT-23.
The gate-threshold voltage range is 1.0V to 3.0V.
The maximum drain-source on-resistance at VGS = 10V is 0.160Ω.
The operating junction and storage temperature range is -55°C to 150°C.