| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,190 pcs
|
4190 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
130 pcs
|
130 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Lead Style | |
| Mounting Type |
The Vishay Dale SI2308DS is an N-Channel MOSFET with a 60V drain-source voltage rating. It offers low on-state resistance, with typical values of 0.16 Ω at VGS = 10 V and 1.7 A, and 0.22 Ω at VGS = 4.5 V and 1.7 A. This device is suitable for applications requiring efficient switching and power management.
Key electrical characteristics include a gate threshold voltage typically around 2V and a continuous drain current of up to 2.0A at 25°C ambient temperature. The MOSFET also features a typical input capacitance of 240 pF and a total gate charge of 7.4 nC at 10V gate-source voltage.
Packaged in a compact TO-236 (SOT-23) surface-mount case, the SI2308DS is designed for space-constrained applications. It operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 1.25W at 25°C. The device is halogen-free, aligning with environmental considerations in modern electronics design.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The typical gate threshold voltage is 2V.
The maximum continuous drain current at 25°C is 2A.
The typical on-state resistance at VGS = 10V and ID = 2.0A is 0.16 Ohms.
The package type is TO-236 (SOT-23).
Yes, the SI2308DS is halogen-free.