SI2308CDS-T1-GE3 The Vishay Dale Si2308CDS-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage and 2.6A continuous drain current. It is housed in a SOT-23-3 package.
Mfr Part #:

SI2308CDS-T1-GE3

Available from 6 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale Si2308CDS-T1-GE3 is an N-Channel MOSFET with a 60V drain-source voltage and 2.6A continuous drain current. It is housed in a SOT-23-3 package.
✓ Total Stock: 312,075 pcs
$ Price Range: $0.99

SI2308CDS-T1-GE3 Available from 6 distributors

✓ Authorised
✓ Non-Authorised

SI2308CDS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2308CDS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale Si2308CDS-T1-GE3 is a single N-Channel MOSFET designed for various applications including battery switches, DC/DC converters, and load switches. It features a TrenchFET® Gen IV power MOSFET technology and is 100% Rg tested.

 

Key electrical specifications include a 60V drain-source breakdown voltage and a maximum continuous drain current of 2.6A at 25°C (Tc). The on-resistance is rated at a maximum of 144mOhm at 1.9A and 10V Vgs. The device operates within a temperature range of -55°C to +150°C (TJ).

 

This MOSFET is available in a SOT-23-3 (TO-236-3, SC-59) surface mount package. It is lead (Pb)-free and halogen-free, indicating compliance with modern environmental standards.

SI2308CDS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale Si2308CDS-T1-GE3 N-Channel MOSFET
Subcategory: Single

SI2308CDS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI2308CDS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2308CDS-T1-GE3 Features

  • N-Channel TrenchFET® Gen IV power MOSFET.
  • 60V drain-source breakdown voltage.
  • 2.6A maximum continuous drain current.
  • 144mOhm maximum on-resistance.
  • SOT-23-3 surface mount package.

SI2308CDS-T1-GE3 Applications

  • Suitable for battery switch applications.
  • Used in DC/DC converter circuits.
  • Effective as a load switch.
  • Designed for general switching tasks.

SI2308CDS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the Si2308CDS-T1-GE3?

The drain-source breakdown voltage is 60V.

What is the maximum continuous drain current for the Si2308CDS-T1-GE3?

The maximum continuous drain current is 2.6A at 25°C (Tc).

What is the typical on-resistance of the Si2308CDS-T1-GE3?

The maximum on-resistance is 144mOhm at 1.9A and 10V Vgs.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the Si2308CDS-T1-GE3 available in?

It is available in a SOT-23-3 (TO-236-3, SC-59) surface mount package.

Is the Si2308CDS-T1-GE3 RoHS compliant?

The device is listed as RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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