| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
21,115 pcs
|
21115 pcs | On Request | 1 | On Request | On Request | 1739+ | On Request | On Request | |
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4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,515 pcs
|
1515 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
640 pcs
|
640 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
438 pcs
|
438 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SI2308BDS-T1-GE3 is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) of up to 2.3A at 25°C case temperature.
This MOSFET offers a low on-resistance (Rds On) of 156mOhm at 1.9A and 10V gate-source voltage (Vgs). The gate charge (Qg) is typically 6.8nC at 10V Vgs. It operates within a temperature range of -55°C to 150°C.
The device is housed in a compact SOT-23-3 (TO-236-3) surface mount package, making it suitable for space-constrained designs. Its technology is based on MOSFET (Metal Oxide) principles.
Key electrical characteristics include a gate-source voltage (Vgs) limit of ±20V and a gate-source threshold voltage (Vgs(th)) of 3V at 250µA. The maximum power dissipation is 1.66W at 25°C case temperature and 1.09W at 25°C ambient temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V minimum.
The device is housed in a SOT-23-3 surface mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum continuous drain current is 2.3A at 25°C case temperature.
The maximum on-resistance is 156mOhm at VGS=10V and ID=1.9A.
The maximum gate-source threshold voltage is 3V at 250µA drain current.
The maximum power dissipation is 1.66W at 25°C case temperature.