BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request |
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The SI2306DS-T1-E3 is an N-Channel MOSFET manufactured by Vishay Siliconix. This component is designed for various electronic applications requiring efficient switching and power control.
Key electrical characteristics include a maximum drain-source breakdown voltage of 30V and a continuous drain current capability of 3.5A. The device features a maximum drain-source on-resistance of 1.25 Ohms at a gate-source voltage of 10V, ensuring low conduction losses.
This MOSFET is supplied in a standard package of 5 units. Its specifications make it suitable for use in power management circuits, load switching, and general-purpose amplification tasks where reliable performance is essential.
Environmental compliance includes RoHS3 compliance and an MSL rating of Level 1. REACH status is unaffected.
The maximum continuous drain current is 3.5A.
The drain-source breakdown voltage is 30V.
The maximum ON-resistance is 1.25 Ohms at VGS=10V.
The RoHS status is RoHS3 Compliant.
The MSL is Level 1.