| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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328,727 pcs
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328727 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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7,020 pcs
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7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,815 pcs
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2815 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request | |
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1,718 pcs
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1718 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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This Vishay Dale SI2306BDS-T1-GE3 is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage of 30V and a continuous drain current rating of 3.16A at ambient temperature.
The MOSFET has a low on-resistance of 47mOhm at a drain current of 3.5A and a gate-source voltage of 10V. The gate charge is specified as a maximum of 4.5nC at 5V gate-source voltage, with a gate threshold voltage of 3V at 250µA.
Operating within a temperature range of -55°C to 150°C, this device has a maximum power dissipation of 750mW at ambient temperature. It is housed in a TO-236-3, SC-59, SOT-23-3 package, suitable for surface mounting.
The technology employed is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET). It is classified under RoHS3 Compliant, MSL 1 Unlimited, and REACH Unaffected statuses, though these compliance details are based on precomputed data with low confidence.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
3.16A at ambient temperature.
47mOhm maximum at 3.5A drain current and 10V gate-source voltage.
SOT-23-3 (also known as TO-236-3 or SC-59).
-55°C to 150°C junction temperature.
3V maximum at 250µA drain current.