Mfr Part #:

SI2306BDS-T1-E3

Mfr Name: Vishay

The Vishay Dale SI2306BDS-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 3.16A. It is supplied in a SOT-23-3 package.

✓ Total Stock: 26,085 pcs

$ Price Range: $0.99

SI2306BDS-T1-E3 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	25,020 pcs On Request	25020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	1,064 pcs On Request	1064 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Trace Tec ✓ Non-Authorised Inventory information	1 pcs On Request	1 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SI2306BDS-T1-E3 Description

Short technical summary and product information.

This Vishay Dale SI2306BDS-T1-E3 is a single N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and can handle a continuous drain current of up to 3.16A at ambient temperature (Ta).

The MOSFET exhibits a low on-resistance (Rds On) of 47mOhm at 3.5A and 10Vgs, with a gate charge (Qg) of 4.5nC at 5Vgs. Its input capacitance (Ciss) is rated at a maximum of 305pF at 15Vds. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA.

Packaged in a compact SOT-23-3 (TO-236) surface mount case, this component operates within a temperature range of -55°C to 150°C (TJ). It is suitable for applications requiring efficient switching and power management.

Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status, though these are unverified.

SI2306BDS-T1-E3 Quick Information

Product Type: MOSFET

Series: SI2306

Canonical Name: Vishay Dale SI2306BDS-T1-E3 N-Channel MOSFET

Subcategory: Single

SI2306BDS-T1-E3 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SI2306BDS-T1-E3 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2306BDS-T1-E3 Features

N-Channel MOSFET with 30V drain-source voltage.
Continuous drain current up to 3.16A.
Low on-resistance of 47mOhm at 3.5A, 10Vgs.
Compact SOT-23-3 surface mount package.
Wide operating temperature range of -55°C to 150°C.

SI2306BDS-T1-E3 Applications

Used in portable battery protection circuits.
Ideal for DC-DC converter load switch designs.
Suitable for automotive sensor interface modules.
Applied in consumer electronics power management.
Effective for motor control driver stages.

SI2306BDS-T1-E3 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage?

30V

What package type does this component use?

SOT-23-3 (TO-236-3, SC-59)

What is the operating junction temperature range?

-55°C to 150°C

What is the maximum gate-source voltage rating?

±20V

What is the maximum power dissipation rating?

750mW at ambient temperature

At what gate voltage is the on-resistance tested?

10V with a 3.5A drain current

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	3.16A (Ta)
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	305pF @ 15V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	750mW (Ta)
Rds On (Max) @ Id, Vgs	47mOhm @ 3.5A, 10V
Supplier Device Package	SOT-23-3 (TO-236)
Supplier Package	SOT-23-3 (TO-236)
Technology	MOSFET
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA