SI2305DS-T1-E3 The Vishay Dale SI2305DS-T1-E3 is a P-Channel MOSFET with a drain-source voltage of 8V and a continuous drain current of 3.5A. It features low Rds(on) and is available in a SOT-23-3 package.
Mfr Part #:

SI2305DS-T1-E3

Available from 6 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2305DS-T1-E3 is a P-Channel MOSFET with a drain-source voltage of 8V and a continuous drain current of 3.5A. It features low Rds(on) and is available in a SOT-23-3 package.
✓ Total Stock: 755,696 pcs
$ Price Range: $0.99

SI2305DS-T1-E3 Available from 6 distributors

✓ Authorised
✓ Non-Authorised

SI2305DS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs(th) (Max) @ Id

SI2305DS-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI2305DS-T1-E3 is a P-Channel MOSFET designed for various applications. It operates with a drain-source voltage (Vds) of up to 8V and can handle a continuous drain current (Id) of 3.5A at 25°C.

 

This MOSFET utilizes TrenchFET technology, offering low on-resistance characteristics. The Rds(on) is specified as a maximum of 52mOhm at a gate-source voltage (Vgs) of 4.5V and a drain current (Id) of 3.5A. The gate threshold voltage (Vgs(th)) is a maximum of 0.8V at 250µA.

 

Key electrical parameters include an input capacitance (Ciss) of 1245pF, output capacitance (Coss) of 375pF, and reverse transfer capacitance (Crss) of 210pF, all measured at 1MHz. The total gate charge (Qg) is a maximum of 15nC.

 

The device is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It has a maximum power dissipation of 1.25W at 25°C and an operating junction temperature range of -55°C to 150°C.

SI2305DS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si2305DS P-Channel 1.8-V TrenchFET Power MOSFET
Subcategory: P-Channel

SI2305DS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2305DS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2305DS-T1-E3 Features

  • P-Channel MOSFET with 8V drain-source voltage.
  • Continuous drain current of 3.5A.
  • Low Rds(on) of 52mOhm maximum.
  • Surface mount SOT-23-3 package.
  • TrenchFET power MOSFET technology.

SI2305DS-T1-E3 Applications

  • Suitable for low-voltage switching.
  • Ideal for power management circuits.
  • Used in portable electronic devices.
  • Applicable in battery-powered systems.

SI2305DS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

8V maximum.

What package does the SI2305DS-T1-E3 come in?

SOT-23-3 (also known as TO-236-3 or SC-59).

What is the operating temperature range?

-55°C to 150°C.

What is the gate threshold voltage?

Maximum 0.8V at drain current 250 µA.

What is the on-resistance at 4.5V gate voltage?

Maximum 52 mOhm at 3.5A drain current.

What is the typical input capacitance?

1245 pF at Vds = 4V.

What is the maximum total gate charge?

15 nC at Vgs = 4.5V.

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