| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
300,000 pcs
|
300000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
187,020 pcs
|
187020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
26,088 pcs
|
26088 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request | |
|
3,920 pcs
|
3920 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,920 pcs
|
3920 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,640 pcs
|
2640 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,833 pcs
|
1833 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,559 pcs
|
1559 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,086 pcs
|
1086 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI2305CDS-T1-GE3 is a P-Channel Mosfet from Vishay Dale. It is rated for a drain-source breakdown voltage of -8 V and a continuous drain current of 5.8 A. The device features a low on-resistance of 35 mΩ at Vgs = -4.5 V (Id = -4.4 A) and 48 mΩ at Vgs = -2.5 V (Id = -3.8 A).
The gate-source threshold volage is guaranteed to be 1 V or less, allowing operation with low gate drive voltages. Maximum gate-source volage is ±8 V, and gate-source leakage is limited to ±100 nA. The zero-gate-voltage drain curren is 1 µA maximum under off-state conditions.
Packaged in a compact SOT23-3 surface-mount package, this Mosfet is suitable for space-constrained designs. Typical applications include load switching, power management in portable devices, and low-voltage DC-DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.