| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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723,200 pcs
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723200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2305ADS-T1-GE3 is a P-Channel MOSFET designed for applications requiring efficient switching. It features a maximum Drain-Source Voltage (Vds) of 8V and a continuous drain current of up to 5.4A at 25°C case temperature.
This MOSFET offers a low on-state resistance (Rds On) of 40mΩ maximum at a gate-source voltage (Vgs) of -4.5V and a drain current (Id) of -4.1A. The gate charge (Qg) is a maximum of 15nC at 4.5V, and the gate-source voltage is rated up to ±8V.
Designed with TrenchFET® technology, it operates within a temperature range of -50°C to 150°C (TJ). The device is housed in a compact TO-236-3, SC-59, SOT-23-3 surface mount package, making it suitable for space-constrained designs. It also meets RoHS3 compliance and is halogen-free.
Key electrical characteristics include a gate-source threshold voltage of 800mV maximum at 250µA and an input capacitance of 740pF maximum at 4V. The maximum power dissipation is 960mW when mounted on a 1" x 1" FR4 board (Ta) or 1.7W at 25°C case temperature (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (Vds) for the SI2305ADS-T1-GE3 is 8V.
The SI2305ADS-T1-GE3 has a continuous drain current rating of 5.4A at 25°C case temperature.
The maximum Rds On for the SI2305ADS-T1-GE3 is 40mΩ at a gate-source voltage of -4.5V and a drain current of -4.1A.
The operating junction and storage temperature range for the SI2305ADS-T1-GE3 is -50°C to 150°C.
The SI2305ADS-T1-GE3 is a P-Channel MOSFET.
The SI2305ADS-T1-GE3 is supplied in a TO-236-3, SC-59, SOT-23-3 package.
Yes, the SI2305ADS-T1-GE3 is RoHS3 compliant.