| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI2305-TP is a P-Channel enhancement mode MOSFET from Micro Commercial Components. It features a drain-source breakdown voltage of -8V (minimum) and a continuous drain current rating of 4.1A, making it suitable for low voltage power management applications.
The device exhibits a gate threshold voltage ranging from -0.55V to -0.9V, allowing for logic-level gate drive compatibility. Gate leakage current is typically ±100nA, and zero gate voltage drain current is limited to -1µA, ensuring low power consumption in off-state conditions.
The SI2305-TP is offered in the compact SOT23 surface mount package, which is ideal for space-constrained designs. It is commonly used in load switching, battery protection, and power distribution circuits in portable electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-8V (minimum) at VGS=0V, ID=-250µA.
-0.55V to -0.9V (maximum -0.9V) at VDS=VGS, ID=-250µA.
Typical ±100nA at VDS=0V, VGS=±8V.
Maximum -1µA at VDS=-8V, VGS=0V.
SOT23 surface mount package.