| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | 0546P// | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Number of Pins | |
| Operating Temperature Range | |
| Package / Case | |
| Power Dissipation | |
| Transistor Type |
The SI2304DS is an N-channel enhancement mode field-effect transistor manufactured by On Semiconductor. It offers a drain-source voltage of 30V and a continuous drain current of 500mA, with a maximum drain current of 1.7A. The MOSFET has an on-resistance of 117 MOhm at a gate-source voltage of 10V and a typical threshold voltage of 2V.
Designed for surface mounting, the SI2304DS comes in a compact SOT-23 package with 3 pins. Its operating temperature range is from -65°C to +150°C, and it has a power dissipation rating of 830mW. This component is suitable for various electronic switching and amplification applications where space and performance are critical.
Key electrical characteristics include a maximum gate-source voltage of 2V. The device is RoHS3 compliant and has an MSL rating of 1, indicating unlimited usability under standard conditions. Its compact size and robust specifications make it a versatile choice for designers.
30 V.
500 mA.
SOT-23.
-65°C to +150°C.
Typically 117 mΩ at Vgs = 10 V.
Typically 2 V.
830 mW.