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SI2304DS The NXP Semiconductors SI2304DS is an N-Channel MOSFET designed for general-purpose applications. It features a 30V Drain-Source Voltage and a 1.7A Continuous Drain Current.
Mfr Part #:

SI2304DS

Available from 3 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors SI2304DS is an N-Channel MOSFET designed for general-purpose applications. It features a 30V Drain-Source Voltage and a 1.7A Continuous Drain Current.
✓ Total Stock: 6,196 pcs
$ Price Range: $2.81

SI2304DS Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
2,983 pcs
On Request
2983 pcs On Request 1 On Request On Request On Request On Request On Request
MW.FEP S.p.A. ✓
Non-Authorised Inventory information
2,983 pcs
On Request
2983 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
230 pcs
On Request
230 pcs On Request 1 On Request On Request 1206+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

SI2304DS Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Operating Temperature
Power Dissipation
SVHC Present
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SI2304DS Description

Short technical summary and product information.

The SI2304DS from NXP Semiconductors is an N-channel enhancement mode field-effect transistor. It is designed for applications requiring a 30V Drain-Source Voltage and offers a Continuous Drain Current of 500 mA, with a maximum current of 1.7 A. The MOSFET has an On Resistance of 117 MOhm at a Gate-Source Voltage of 10V.

 

This component operates within a wide temperature range of -65°C to +150°C and has a Power Dissipation of 830 mW. It is housed in a compact SOT-23 package, making it suitable for surface-mount designs. The typical Gate Threshold Voltage is 2V.

 

The SI2304DS is specified with RoHS3 compliance and an MSL rating of 1, indicating its suitability for a broad range of electronic manufacturing processes.

SI2304DS Quick Information

Product Type: MOSFET
Canonical Name: NXP Semiconductors SI2304DS N-Channel MOSFET
Subcategory: N-Channel

SI2304DS Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2304DS Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2304DS Features

  • N-Channel enhancement mode MOSFET.
  • 30V Drain-Source Voltage.
  • 1.7A maximum continuous drain current.
  • SOT-23 surface-mount package.
  • Wide operating temperature range.

SI2304DS Applications

  • Suitable for general-purpose switching.
  • Ideal for power management circuits.
  • Used in low-power electronic devices.
  • Applicable in battery-powered systems.

SI2304DS FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI2304DS?

30V.

What is the continuous drain current rating?

500mA.

What is the typical gate threshold voltage?

2V.

What is the on-resistance at Vgs=10V?

117 MOhm.

What is the operating temperature range?

-65°C to +150°C.

What package is the SI2304DS available in?

SOT-23.

What is the maximum power dissipation?

830mW.

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