| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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496,393 pcs
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496393 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 | |
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361,020 pcs
|
361020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
26,741 pcs
|
26741 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,096 pcs
|
1096 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
115 pcs
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115 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-04-29 00:15:11 |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay SI2304DDS-T1-GE3 is a single N-Channel power MOSFET designed for various applications, including DC/DC converters. It features a 30V drain-source breakdown voltage and a low on-resistance of 60mOhm at 10V gate-source voltage.
This MOSFET offers a continuous drain current rating of 3.6A (Tc) and 3.3A (Ta), with a maximum power dissipation of 1.7W (Tc) or 1.1W (Ta). The operating temperature range is from -55°C to 150°C.
The device is housed in a surface-mount SOT-23-3 (TO-236) package, making it suitable for space-constrained designs. It utilizes TrenchFET® technology and is 100% Rg tested.
Key electrical characteristics include a gate charge (Qg) of 6.7 nC and an input capacitance (Ciss) of 235 pF. The gate-source threshold voltage (Vgs(th)) is typically 1.2V and has a maximum of 2.2V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The maximum continuous drain current is 3.6A at 25°C case temperature.
The Rds On (Max) is 60mOhm at 10Vgs.
The operating temperature range is -55°C to 150°C.
This MOSFET is supplied in a SOT-23-3 (TO-236) surface mount package.
The typical gate charge is 2.1 nC at 10Vgs, with a maximum of 6.7 nC.
The typical gate-source threshold voltage is 1.2V.