| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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80 pcs
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80 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The SI2304DDS-T1-BE3 is an N-Channel enhancement-mode MOSFET manufactured by Vishay. It features a maximum drain-to-source voltage of 30V and continuous drain current ratings of 3.3A at 25°C ambient temperature and 3.6A at case temperature. The device incorporates low gate charge (6.7 nC at 10V) and low input capacitance (235 pF at 15V), enabling efficient switching performance.
This MOSFET is designed for surface-mount assembly in the compact SOT-23-3 package (TO-236-3, SC-59). It supports drive voltages of 4.5V and 10V, with a maximum on-resistance of 60 mOhm at 3.2A and 10V. The maximum gate-source voltage is ±20V, and the gate threshold voltage is 2.2V at 250 µA drain current.
With an operating junction temperature range of -55°C to 150°C, this device is suitable for a variety of power management and switching applications. Maximum power dissipation is 1.1W at ambient temperature and 1.7W at case temperature.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 V.
3.3 A at 25°C ambient and 3.6 A at case temperature.
60 mOhm at Vgs = 10V and Id = 3.2 A.
Surface-mount SOT-23-3 (TO-236-3, SC-59).
-55°C to 150°C (junction temperature).
6.7 nC at Vgs = 10 V.
235 pF at Vds = 15 V.