SI2304BDS-T1-GE3 The Vishay Dale SI2304BDS-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 2.6A. It is supplied in a compact SOT-23-3 package.
Mfr Part #:

SI2304BDS-T1-GE3

Available from 4 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2304BDS-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 2.6A. It is supplied in a compact SOT-23-3 package.
✓ Total Stock: 479,860 pcs
$ Price Range: $0.99

SI2304BDS-T1-GE3 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

SI2304BDS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2304BDS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2304BDS-T1-GE3 is an N-Channel TrenchFET Power MOSFET designed for various electronic applications. It offers a drain-source breakdown voltage of 30V and a continuous drain current rating of 2.6A at 25°C ambient temperature.

 

Key electrical characteristics include a low on-state resistance of 70mOhm at 2.5A and 10V gate-source voltage, and a gate charge of 4nC typical. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is housed in a TO-236-3, SC-59, SOT-23-3 surface-mount package, making it suitable for space-constrained designs. It features a gate-source voltage tolerance of ±20V and is compliant with RoHS and Halogen-free standards.

SI2304BDS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix Si2304BDS N-Channel 30V TrenchFET Power MOSFET
Subcategory: N-Channel

SI2304BDS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI2304BDS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2304BDS-T1-GE3 Features

  • N-Channel TrenchFET Power MOSFET technology.
  • 30V drain-source breakdown voltage.
  • 2.6A continuous drain current.
  • Low Rds(on) of 70mOhm at 10V Vgs.
  • Compact SOT-23-3 surface-mount package.

SI2304BDS-T1-GE3 Applications

  • Suitable for power switching circuits.
  • Ideal for space-constrained designs.
  • Used in general purpose power management.
  • Efficient load switching applications.

SI2304BDS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI2304BDS-T1-GE3?

The drain-source breakdown voltage is 30V.

What is the maximum continuous drain current?

The maximum continuous drain current is 3.2A at 25°C.

What is the Rds On (Max) at Vgs = 10V?

The Rds On (Max) is 0.07 Ohm at 2.5A and Vgs = 10V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI2304BDS-T1-GE3 supplied in?

It is supplied in a TO-236-3, SC-59, SOT-23-3 package.

Is the SI2304BDS-T1-GE3 RoHS compliant?

Yes, it is RoHS3 Compliant.

Is the SI2304BDS-T1-GE3 Halogen-free?

Yes, it is Halogen-free.

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