SI2304BDS-T1-E3 The Vishay Siliconix SI2304BDS-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage rating. It features a low Rds On of 70mOhm at 2.5A and 10V Vgs.
Mfr Part #:

SI2304BDS-T1-E3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SI2304BDS-T1-E3 is an N-Channel MOSFET with a 30V drain-source voltage rating. It features a low Rds On of 70mOhm at 2.5A and 10V Vgs.
✓ Total Stock: 215,914 pcs
$ Price Range: $0.99

SI2304BDS-T1-E3 Available from 5 distributors

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SI2304BDS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2304BDS-T1-E3 Description

Short technical summary and product information.

The Vishay Siliconix SI2304BDS-T1-E3 is an N-Channel MOSFET designed for power management applications. It offers a drain-source breakdown voltage of 30V and a continuous drain current of up to 3.2A at 25°C.

 

Key electrical characteristics include a low on-state resistance (Rds On) of 70mOhm at a Vgs of 10V and an Id of 2.5A. The gate threshold voltage is a maximum of 3V at 250µA. The device operates within a wide temperature range of -55°C to 150°C.

 

This MOSFET is housed in a compact SOT-23-3 (TO-236) surface-mount package, making it suitable for space-constrained designs. It is compliant with RoHS directives and has a moisture sensitivity level of 1.

 

Applications for this MOSFET include general-purpose switching, power supply circuits, and load driving where efficient power control is required.

SI2304BDS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SI2304BDS N-Channel 30V MOSFET

SI2304BDS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SI2304BDS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2304BDS-T1-E3 Features

  • 30V drain-source breakdown voltage.
  • 2.6A continuous drain current.
  • 70mOhm typical Rds On.
  • N-Channel MOSFET technology.
  • SOT-23-3 surface mount package.

SI2304BDS-T1-E3 Applications

  • General purpose switching applications.
  • Power supply circuit designs.
  • Efficient load driving circuits.
  • Space-constrained electronic systems.

SI2304BDS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI2304BDS-T1-E3?

The drain-source breakdown voltage is 30V.

What is the maximum gate-source voltage for this MOSFET?

The maximum gate-source voltage is ±20V.

What is the typical Rds On for the SI2304BDS-T1-E3 at Vgs = 10V?

The typical Rds On is 0.07 Ohm at Vgs = 10V and Id = 2.5A.

What is the operating temperature range for this component?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI2304BDS-T1-E3 available in?

It is available in a SOT-23-3 (TO-236) package.

Is the SI2304BDS-T1-E3 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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