SI2303CDS-T1-GE3 The Vishay Dale SI2303CDS-T1-GE3 is a P-Channel MOSFET designed for load switching applications. It features a 30V drain-source breakdown voltage and a continuous drain current of 2.7A.
Mfr Part #:

SI2303CDS-T1-GE3

Available from 6 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2303CDS-T1-GE3 is a P-Channel MOSFET designed for load switching applications. It features a 30V drain-source breakdown voltage and a continuous drain current of 2.7A.
✓ Total Stock: 1,309,502 pcs
$ Price Range: $0.99

SI2303CDS-T1-GE3 Available from 6 distributors

✓ Authorised
✓ Non-Authorised

SI2303CDS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2303CDS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2303CDS-T1-GE3 is a P-Channel MOSFET with a drain-source breakdown voltage of 30V. It is designed for applications such as load switching.

 

This MOSFET offers a low on-state resistance of 190mOhm at 1.9A and 10V Vgs, ensuring efficient power transfer. The input capacitance is rated at 155pF at 15V, and the gate charge is a maximum of 8nC at 10V.

 

Packaged in a compact SOT-23-3 (TO-236) surface-mount case, the SI2303CDS-T1-GE3 operates within a temperature range of -55°C to 150°C. It has a maximum power dissipation of 1W (Ta) or 2.3W (Tc).

 

The device is manufactured using TrenchFET® Power MOSFET technology and is available in lead-free and halogen-free options.

SI2303CDS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2303CDS-T1-GE3 P-Channel 30V 2.7A SOT-23 MOSFET
Subcategory: P-Channel

SI2303CDS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2303CDS-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2303CDS-T1-GE3 Features

  • P-Channel 30V MOSFET for load switching.
  • Low 190mOhm Rds On at 1.9A, 10V.
  • Compact SOT-23-3 surface mount package.
  • Wide operating temperature range of -55°C to 150°C.
  • Available in lead-free and halogen-free options.

SI2303CDS-T1-GE3 Applications

  • Ideal for load switch applications.
  • Suitable for power management circuits.
  • Used in general purpose switching.

SI2303CDS-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the SI2303CDS-T1-GE3?

The drain-source breakdown voltage is 30 V.

What is the maximum continuous drain current?

The maximum continuous drain current is 2.7A at 25°C case temperature.

What is the Rds On for this MOSFET?

The Rds On is a maximum of 190mOhm at 1.9A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI2303CDS-T1-GE3 in?

It is supplied in a TO-236-3, SC-59, SOT-23-3 package.

Is this MOSFET RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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