SI2303BDS-T1-E3 The Vishay Dale SI2303BDS-T1-E3 is a P-Channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a continuous drain current of 1.49A.
Mfr Part #:

SI2303BDS-T1-E3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2303BDS-T1-E3 is a P-Channel MOSFET designed for surface mount applications. It features a 30V drain-source voltage and a continuous drain current of 1.49A.
✓ Total Stock: 201,562 pcs
$ Price Range: $0.99

SI2303BDS-T1-E3 Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
200,889 pcs
200889 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
673 pcs
673 pcs On Request 1 On Request On Request 0631+ On Request On Request

SI2303BDS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2303BDS-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI2303BDS-T1-E3 is a P-Channel MOSFET with a voltage rating of 30V and a continuous drain current of 1.49A at ambient temperature. It is housed in a SOT-23-3 (TO-236-3, SC-59) package, suitable for surface mounting.

 

Key electrical characteristics include a maximum on-resistance of 200mOhm at 1.7A and 10V, a gate threshold voltage of 3V at 250µA, and a gate-source voltage range of ±20V. The input capacitance is 180pF at 15V, and the gate charge is 10nC at 10V. The device operates within a temperature range of -55°C to 150°C.

 

This MOSFET is designed for various electronic applications requiring a P-Channel enhancement mode device. Its surface mount package makes it suitable for compact designs. The maximum power dissipation is 700mW at ambient temperature.

SI2303BDS-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2303BDS-T1-E3 P-Channel MOSFET
Subcategory: Single

SI2303BDS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2303BDS-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2303BDS-T1-E3 Features

  • P-Channel MOSFET technology.
  • 30V drain-source voltage rating.
  • 1.49A continuous drain current.
  • Surface mount SOT-23-3 package.
  • Wide operating temperature range.

SI2303BDS-T1-E3 Applications

  • Suitable for power switching applications.
  • Ideal for battery-powered devices.
  • Used in general-purpose load switching.
  • Applicable in portable electronics.

SI2303BDS-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage for the SI2303BDS-T1-E3?

The drain to source voltage (Vdss) is 30V.

What is the package type for this MOSFET?

The package is SOT-23-3, also known as TO-236-3 or SC-59.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

Is the SI2303BDS-T1-E3 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the moisture sensitivity level (MSL) for this part?

The moisture sensitivity level is 1.

What is the continuous drain current?

The continuous drain current is 1.49A at ambient temperature.

What is the maximum on-resistance?

The maximum on-resistance is 200mOhm at 1.7A drain current and 10V gate-source voltage.

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