SI2303BDS-T1 The Vishay Dale SI2303BDS-T1 is a P-Channel MOSFET designed for small signal applications. It features a 30V drain-to-source voltage and a continuous drain current of 1.49A.
Mfr Part #:

SI2303BDS-T1

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2303BDS-T1 is a P-Channel MOSFET designed for small signal applications. It features a 30V drain-to-source voltage and a continuous drain current of 1.49A.
✓ Total Stock: 624 pcs
$ Price Range: $0.99

SI2303BDS-T1 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
624 pcs
624 pcs On Request 1 On Request On Request 06+ On Request On Request

SI2303BDS-T1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2303BDS-T1 Description

Short technical summary and product information.

The Vishay Dale SI2303BDS-T1 is a P-Channel MOSFET designed for small signal applications. This component offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 1.49A. It provides a low on-resistance (Rds On Max) of 200mOhm at 1.7A and 10V.

 

The MOSFET operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 700mW. It is packaged in a SOT-23-3 surface mount configuration, making it suitable for compact designs.

 

Key electrical characteristics include a gate-to-source voltage (Vgs) of ±20V, a gate charge (Qg) of 10nC at 10V, and an input capacitance (Ciss) of 180pF at 15V. The turn-on delay time is 55ns, and the turn-off delay time is 10ns, with a fall time of 40ns.

 

This device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.

SI2303BDS-T1 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: Vishay Dale SI2303BDS-T1 P-Channel MOSFET
Subcategory: P-Channel

SI2303BDS-T1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI2303BDS-T1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2303BDS-T1 Features

  • P-Channel MOSFET for small signal applications.
  • 30V drain-to-source voltage rating.
  • 1.49A continuous drain current.
  • Low 200mOhm on-resistance.
  • SOT-23-3 surface mount package.

SI2303BDS-T1 Applications

  • Suitable for compact electronic designs.
  • Used in general switching applications.
  • Ideal for low-power circuits.
  • Component for signal conditioning.

SI2303BDS-T1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the SI2303BDS-T1?

The maximum drain-to-source voltage (Vdss) is 30V.

What is the continuous drain current rating of the SI2303BDS-T1?

The continuous drain current (ID) is 1.49A at ambient temperature.

What is the on-resistance of the SI2303BDS-T1?

The maximum on-resistance (Rds(on)) is 200mOhm at a gate-source voltage of 10V and drain current of 1.7A.

What package does the SI2303BDS-T1 come in?

The SI2303BDS-T1 is available in a SOT-23-3 surface-mount package.

What is the operating temperature range of the SI2303BDS-T1?

The operating junction temperature range is -55°C to 150°C.

What is the gate threshold voltage of the SI2303BDS-T1?

The maximum gate threshold voltage (Vgs(th)) is 3V at a drain current of 250µA.

What is the maximum power dissipation of the SI2303BDS-T1?

The maximum power dissipation is 700mW at ambient temperature.

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