| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,760 pcs
|
3760 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request | |
|
2,836 pcs
|
2836 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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The SI2302DS is an N-channel enhancement mode field-effect transistor manufactured by NXP Semiconductors, utilizing TrenchMOS™ technology. This MOSFET is suitable for applications such as battery management, high-speed switching, and low-power DC-to-DC converters.
Key electrical characteristics include a maximum drain-source voltage of 20V and a continuous drain current of up to 2.5A at 25°C with a VGS of 4.5V. The device offers a low drain-source on-state resistance, with a typical value of 56.8 mΩ at 3.6A and VGS of 4.5V, and 77 mΩ at 3.1A and VGS of 2.5V.
Packaged in a subminiature SOT-23 surface mount package, the SI2302DS is designed for compact electronic designs. It operates with a gate-source voltage range of ±8V and has a maximum junction temperature of 150°C. The transistor element material is silicon, and it features a single N-channel configuration with a built-in diode.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage for the SI2302DS is 20V.
The continuous drain current for the SI2302DS is up to 2.5A at 25°C with VGS = 4.5V.
The typical drain-source on-state resistance is 56.8 mΩ at 3.6A and VGS = 4.5V.
The SI2302DS is available in a SOT-23 package.
The SI2302DS is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SI2302DS is 1.