SI2302DDS-T1-GE3 The Vishay Dale SI2302DDS-T1-GE3 is an N-Channel MOSFET in a SOT-23-3 package. It offers a 20V Drain-Source Voltage and 2.9A continuous drain current.
Mfr Part #:

SI2302DDS-T1-GE3

Available from 5 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI2302DDS-T1-GE3 is an N-Channel MOSFET in a SOT-23-3 package. It offers a 20V Drain-Source Voltage and 2.9A continuous drain current.
✓ Total Stock: 995,419 pcs
$ Price Range: $0.99

SI2302DDS-T1-GE3 Available from 5 distributors

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SI2302DDS-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI2302DDS-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SI2302DDS-T1-GE3 is an N-Channel MOSFET designed for load switching in portable devices and DC/DC converters. It features a 20V Drain-Source Voltage and a maximum continuous drain current of 2.9A at 25°C.

 

This MOSFET has a low on-state resistance of 57mOhm at 3.6A and 4.5V Vgs, with a gate charge of 5.5nC typical. The operating temperature range is from -55°C to 150°C.

 

Packaged in a surface-mount SOT-23-3 (TO-236) package, it is suitable for compact electronic designs. The device operates with a gate-source voltage of up to ±8V and has a threshold voltage of 850mV maximum.

 

Key electrical characteristics include a 7ns rise time and 7ns fall time, with turn-on delay of 8ns and turn-off delay of 30ns. Power dissipation is rated at 710mW at 25°C ambient temperature.

SI2302DDS-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI2302DDS-T1-GE3 N-Channel MOSFET
Subcategory: N-Channel

SI2302DDS-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

SI2302DDS-T1-GE3 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2302DDS-T1-GE3 Features

  • N-Channel MOSFET for versatile switching.
  • 20V Drain-Source Voltage rating.
  • 2.9A continuous drain current capability.
  • Low 57mOhm on-state resistance.
  • Compact SOT-23-3 surface mount package.

SI2302DDS-T1-GE3 Applications

  • Ideal for portable battery powered device load switching.
  • Used in automotive low voltage signal control circuits.
  • Suitable for DC motor driver output stage configurations.
  • Used in USB hub power distribution management boards.
  • Applied in consumer electronics power management integrated circuits.

SI2302DDS-T1-GE3 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the Drain-Source Breakdown Voltage?

The Drain-Source Breakdown Voltage is 20V.

What is the maximum Gate-Source Voltage?

The maximum Gate-Source Voltage is ±8V.

What is the maximum On-State Resistance?

The maximum On-State Resistance is 57mOhm at 3.6A and 4.5V Vgs.

What is the continuous drain current?

The continuous drain current is 2.9A at 25°C.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C.

What package is this MOSFET in?

This MOSFET is in a SOT-23-3 package.

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